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P‐41: Investigation of the Photon‐Enhanced Bias Instability of InGaZnO TFTs for the Application of Transparent AM‐OLED Displays
Author(s) -
Ryu Min Ki,
Park SangHee Ko,
Yang Shin Hyuk,
Byun ChunWon,
Kwon OhSang,
Park EunSuk,
Cho Kyoung Ik,
Hwang ChiSun
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499954
Subject(s) - thin film transistor , materials science , optoelectronics , transistor , oled , threshold voltage , subthreshold conduction , stress (linguistics) , gate dielectric , trapping , field effect , dielectric , electrical engineering , layer (electronics) , nanotechnology , voltage , ecology , linguistics , engineering , biology , philosophy
We investigated the effect of the light‐induced bias instability of indium‐gallium‐zinc oxide(IGZO) thin film transistors. The IGZO TFT exhibited the excellent subthreshold gate swing of 0.12V/decade, Vth of −0.5V, and high Ion/off ratio of >10 9 as well as a high field‐effect mobility of 26.7 cm 2 /Vs. The Vth is not changed after positive bias illumination stress (PBIS) for 10000sec. However, the Vth is −8V after negative bias illumination stress (NBIS)for 10000sec. This phenomenon can be attributed the trapping of the photon‐induced charges into the gate dielectric/active interface. We fabricated transparent AM‐OLED driven by highly stable bottom gate IGZO TFT array