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P‐37: Room Temperature Top‐Gate Self‐Aligned Amorphous InGaZnO TFTs Fabricated on Colorless Polyimide Substrate
Author(s) -
Yeh YungHui,
Cheng ChunCheng,
Lin ChangYu,
Ho GengTai,
Yu MingJiue,
Lai Benjamin ChihMing,
Leu ChyiMing
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499950
Subject(s) - materials science , polyimide , amorphous solid , optoelectronics , thin film transistor , substrate (aquarium) , threshold voltage , sputtering , voltage , thin film , nanotechnology , layer (electronics) , electrical engineering , transistor , chemistry , crystallography , oceanography , engineering , geology
Room temperature top‐gate self‐aligned amorphous InGaZnO TFTs were successfully fabricated on colorless polyimide plastic substrates for the first time. All these thin films were deposited by sputtering system at room temperature. The maximum field‐effect mobility is 48.5 cm 2 /V‐s, the subthreshold swing is 0.1 V/decade, and the threshold voltage is −1V.