P‐33: Cu‐Mn Electrodes for a‐Si TFT and Its Electrical Characteristics | Zendy

Koike Junichi | Zendy; Hirota Kazuhiko | Zendy; Naito Mayumi | Zendy; Yun Pilsang | Zendy; Sutou Yuji | Zendy

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P‐33: Cu‐Mn Electrodes for a‐Si TFT and Its Electrical Characteristics

Author(s) -

Koike Junichi,

Hirota Kazuhiko,

Naito Mayumi,

Yun Pilsang,

Sutou Yuji

Publication year - 2010

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3499945

Subject(s) - ohmic contact , thin film transistor , materials science , electrical resistivity and conductivity , electrode , amorphous solid , diffusion barrier , optoelectronics , alloy , metallurgy , composite material , electrical engineering , chemistry , crystallography , layer (electronics) , engineering

Cu‐Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact, and a low contact resistivity. TFT structure showed the ON/OFF ratio of better than 10 6 .

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