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P‐33: Cu‐Mn Electrodes for a‐Si TFT and Its Electrical Characteristics
Author(s) -
Koike Junichi,
Hirota Kazuhiko,
Naito Mayumi,
Yun Pilsang,
Sutou Yuji
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499945
Subject(s) - ohmic contact , thin film transistor , materials science , electrical resistivity and conductivity , electrode , amorphous solid , diffusion barrier , optoelectronics , alloy , metallurgy , composite material , electrical engineering , chemistry , crystallography , layer (electronics) , engineering
Cu‐Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact, and a low contact resistivity. TFT structure showed the ON/OFF ratio of better than 10 6 .