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P‐28: Effect of Annealing Temperature on Reliability of Solution‐Processed Zinc Tin Oxide Thin Film Transistors
Author(s) -
Lee JeongSoo,
Kim YongJin,
Lee YongUk,
Kuk SeungHee,
Han MinKoo,
Kim YongHoon
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499938
Subject(s) - thin film transistor , annealing (glass) , materials science , threshold voltage , optoelectronics , tin , zinc , reliability (semiconductor) , tin oxide , oxide , transistor , voltage , electrical engineering , metallurgy , composite material , layer (electronics) , thermodynamics , engineering , power (physics) , physics
We fabricated solution‐processed ZTO TFTs with annealing temperature of 300 °C ∼ 550 °C in order to investigate the reliability of ZTO TFT. The shift of threshold voltage by gate bias‐stress of ZTO TFTs is altered according to annealing temperature because of the increase and decrease of trap states caused by bonding variation.