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P‐25: New Polymer‐Capped a‐IGZO TFT with High Sensitivity to Visible Light for the Development of Integrated Touch Sensor Array
Author(s) -
Zan HsiaoWen,
Hsueh HsiuWen,
Kao ShihChin,
Chen WeiTsung,
Ku MingChe,
Tsai WuWei,
Tsai ChuangChuang,
Meng HsinFei
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499931
Subject(s) - thin film transistor , optoelectronics , materials science , white light , sensitivity (control systems) , transistor , polymer , layer (electronics) , nanotechnology , electrical engineering , electronic engineering , engineering , voltage , composite material
We deposit a polymer layer (P3HT) on top of a‐IGZO thin‐film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT‐capped device is about 30 times of that of standard device. These results are important for the development ofin‐cell integrated touch sensor in a ‐IGZO TFT array.