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P‐23: Solution‐processed Amorphous Lanthanum Indium Zinc Oxide Thin‐film Transistors
Author(s) -
Kim Doo Na,
Kim Dong Lim,
Kim Gun Hee,
Kim Si Joon,
Kim Hyun Jae
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499912
Subject(s) - thin film transistor , lanthanum , amorphous solid , materials science , indium , gallium , zinc , threshold voltage , lanthanum oxide , oxide , transistor , optoelectronics , inorganic chemistry , analytical chemistry (journal) , voltage , nanotechnology , metallurgy , chemistry , crystallography , electrical engineering , engineering , layer (electronics) , chromatography
In this work, we introduce a solution‐processed amorphous lanthanum indium zinc oxide (LIZO) TFT. From the characteristic variation of LIZO films according to La atomic percentage, it was confirmed that additive La atoms suppress the carrier generation by reducing oxygen vacancies. LIZO TFT was optimized at La 5% and its channel mobility, threshold voltage, s‐factor, and on‐off ratio were 2.64 cm 2 /Vs, 7.86 V, 0.6 V/dec, and ∼10 6 , respectively. From these results, as substitution material of gallium in IGZO, lanthanum can be used for one of the candidates of carrier controller in IZO system.