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P‐22: Memory Effects of Solution‐processed Oxide Thin‐Film Transistor using ZnO Nanoparticles
Author(s) -
Bae Jung Hyeon,
Kim Gun Hee,
Jeong Woong Hee,
Kim Hyun Jae
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499910
Subject(s) - thin film transistor , trapping , materials science , transistor , nanoparticle , hysteresis , layer (electronics) , optoelectronics , non volatile memory , charge (physics) , thin film , nanotechnology , electrical engineering , voltage , condensed matter physics , physics , quantum mechanics , ecology , engineering , biology
In this study, we report the study on the non‐volatile memory effects of all solution‐processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge‐trapping layer.