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P‐20: An Efficient Method for Improving the Negative‐Bias‐Temperature‐Stress (NBTS) Stability of Amorphous In‐Ga‐Zn‐O TFT
Author(s) -
Wu ChenYi,
Lin ChiJui,
Huang ChunYao,
Chen HsinLi,
Kao YihChyun,
Hung MingChin,
Lin WeiTing,
Chang JiunJye,
Chen PoLun,
Chen Chien Hung
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499908
Subject(s) - thin film transistor , materials science , amorphous solid , voltage , plasma , pixel , threshold voltage , optoelectronics , transistor , computer science , composite material , electrical engineering , chemistry , crystallography , physics , artificial intelligence , layer (electronics) , quantum mechanics , engineering
An efficient method of preparing a α‐IGZO TFT with better negative‐bias‐temperature‐stress (NBTS) stability is presented. When the α ‐IGZO TFT is used as the switch of a pixel, it suffers a long time NBTS. The NBTS of α ‐IGZO TFT would cause the Vth shift toward negative value, and thus increase the leakage current which leads to the pixel voltage drop when pixel is holding. In this work, some post‐IGZO plasma treatments methods are studied for the optimized NBTS stability process. with N2O plasma treatment being employed, the α ‐IGZO TFT shows excellent NBTS stability.