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P‐18: Suppression of Threshold Voltage Shift of Oxide‐based TFT by Employing Thermal Pre‐treatment
Author(s) -
Kim SunJae,
Park HyunSang,
Lee SooYeon,
Ji SeonBeom,
Han MinKoo,
Lee WooGeun,
Yoon KapSoo,
Lee YoungWook
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499906
Subject(s) - thin film transistor , oxide , materials science , threshold voltage , trapping , hydrogen , thermal stability , oxide thin film transistor , layer (electronics) , optoelectronics , thermal , voltage , chemistry , composite material , electrical engineering , metallurgy , transistor , engineering , thermodynamics , physics , ecology , organic chemistry , biology
Abstract The stability of oxide‐based TFT under bias stress was considerably improved by employing in‐Situ thermal pretreatment, which suppresses hydrogen content in the oxide active layer. By suppressing the inflow of hydrogen, easily movable, back interface trapping was reduced and the V TH shift of the oxide TFT was suppressed successfully.