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79.2: Wet Patterning of Thin Films in Vertical Transfer Wet Station for TFT Manufacturing
Author(s) -
Lee SangHyuk,
Seo BoHyun,
Seo Jong Hyun,
Lee KangWoong,
Jeon JaeHong,
Choe Heehwan,
Ryu JongHyeok,
Park Byungwoo,
Chang DaeHyun
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499879
Subject(s) - tilt (camera) , thin film transistor , materials science , etching (microfabrication) , substrate (aquarium) , dry etching , optoelectronics , transfer (computing) , thin film , transistor , composite material , nanotechnology , computer science , electrical engineering , mechanical engineering , engineering , geology , oceanography , layer (electronics) , voltage , parallel computing
Compared with tilt transfer wet station, vertical etching system has a many advantages that are 50% space savings, higher throughput and good etch uniformity over an entire glass for thin film transistor application. The aim of the present work is to analysis on a vertical etching system to improve the process factors. The computational fluid dynamics analysis is used to testify the change of the etch uniformity as a function of tilt angle of the glass substrate.