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77.2: Invited Paper : Technical Issues Towards All Inkjet‐Printed Organic Thin‐Film Transistors
Author(s) -
Hong Yongtaek,
Chung Seungjun
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499869
Subject(s) - materials science , thin film transistor , transistor , wetting , optoelectronics , printed electronics , layer (electronics) , contact resistance , thin film , dielectric , nanotechnology , electrode , organic field effect transistor , organic semiconductor , engineering physics , electrical engineering , field effect transistor , composite material , engineering , inkwell , chemistry , voltage
In this paper, technical issues and process considerations towards all inkjet‐printed organic thin‐film transistors are addressed, which include formation of the narrow, high‐aspect‐ratio metal lines, curing conditions of the printed high‐quality organic gate dielectric layer, surface energy and wetting issues for the printed organic semiconducting layer, and contact resistance between source/drain electrodes and the organic semiconducting layer, especially for the bottom‐contact organic thin film transistor structure.