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76.4: A Simple Technology for Realizing Self‐Aligned Zinc Oxide Thin‐Film Transistor
Author(s) -
Ye Zhi,
Chow Thomas,
Zhang Dongli,
Wong Man
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499859
Subject(s) - etching (microfabrication) , materials science , transistor , threshold voltage , thin film transistor , optoelectronics , channel (broadcasting) , simple (philosophy) , stack (abstract data type) , oxide , doping , field effect transistor , voltage , electrical engineering , nanotechnology , layer (electronics) , computer science , engineering , metallurgy , philosophy , epistemology , programming language
A simple process technology, combining in one step the etching of the gate‐stack and the doping of the source/drain regions, is developed for realizing a polycrystalline zinc oxide thin‐film transistor. The resulting transistor exhibits a field‐effect mobility of ∼280cm 2 /Vs, a linearly extrapolated threshold voltage of ∼1V, a pseudo sub‐threshold slope of ∼185mV/decade and an on/off current ratio of ∼4×10 7 . These characteristics are found to behave nicely with reducing channel length, exhibiting short‐channel effects only when the channel length is scaled to ∼1μm.
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