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76.3: 32‐inch LCD Panel Using Amorphous Indium‐Gallium‐Zinc‐Oxide TFTs
Author(s) -
Lu HsiungHsing,
Ting HungChe,
Shih TsungHsiang,
Chen ChiaYu,
Chuang ChingSang,
Lin Yusin
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499858
Subject(s) - thin film transistor , liquid crystal display , materials science , threshold voltage , optoelectronics , amorphous solid , transistor , voltage , electrical engineering , nanotechnology , crystallography , engineering , chemistry , layer (electronics)
32‐inch TFT‐LCD Panel using the amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) is demonstrated in this study. The size of 32‐inch TFT‐LCD driven by a‐IGZO TFTs was the top two largest sizes in our limited information. Less report was larger than the size of 32‐inch a‐IGZO TFT‐LCDs. To realize a‐IGZO TFTs driving the large size TFT‐LCD panel, bottom gate structure is proposed. High performance a‐IGZO TFTs is achieved successfully to ligh‐on the 32‐inch LCD panel. Uniform electrical characteristic is obtained on the coplanar type TFTs. The field effect mobility is 5.16 cm 2 /Vs, threshold voltage is 0.5 V, sub‐threshold swing is 0.38 V/decade, and on/off current ratio is 1.8 × 10 8 . After 1000 sec DC gate bias stress at −30 V, the threshold voltage shifts is less than 1.1 V.