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76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display
Author(s) -
Seo HyunSik,
Bae JongUk,
Kim DaeWon,
Ryoo Chang II,
Kang ImKuk,
Min SoonYoung,
Kim YongYub,
Han JoonSoo,
Kim ChangDong,
Hwang YongKee,
Chung InJae
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499856
Subject(s) - passivation , materials science , layer (electronics) , titanium , etching (microfabrication) , optoelectronics , indium , thin film transistor , oxide , molybdenum , active matrix , titanium oxide , nanotechnology , metallurgy , chemical engineering , engineering
Titanium oxide (TiO x ) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etching process and transformed into TiO x by the surface treatment using oxygen plasma. From device measurement, we have observed that I on /I off ratio and mobility are ∼10 8 and 9 cm 2 V −1 sec −1 , respectively. AMLCD panel has been demonstrated to verify the device uniformity and performance.