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76.1: High Aperture Ratio LCD Display using In‐Ga‐Zn‐Oxide TFTs without Storage Capacitor
Author(s) -
Shishido Hideaki,
Toyotaka Kouhei,
Tsubuku Masashi,
Noda Kousei,
Ohara Hiroki,
Nishi Takeshi,
Moriya Koji,
Godo Hiromichi,
Koyama Jun,
Yamazaki Shunpei,
Oikawa Yoshiaki,
Handa Takuya,
Sakakura Masayuki
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499854
Subject(s) - backlight , materials science , aperture (computer memory) , liquid crystal display , capacitor , optoelectronics , thin film transistor , power consumption , pixel , reduction (mathematics) , power (physics) , electrical engineering , optics , engineering , nanotechnology , physics , mechanical engineering , layer (electronics) , voltage , quantum mechanics , geometry , mathematics
By using oxide semiconductors, we succeeded in prototyping a 3.4‐inch QHD LCD panel whose aperture ratio is high and pixels do not include a storage capacitor. The aperture ratio is increased from 40 % to 59%, resulting in reduction of power consumption in a backlight unit.