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69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs
Author(s) -
Mo Yeon Gon,
Kim Minkyu,
Kang Chul Kyu,
Jeong Jong Han,
Park Yong Sung,
Choi Chaun Gi,
Kim Hye Dong,
Kim Sang Soo
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499826
Subject(s) - amoled , thin film transistor , backplane , materials science , oxide thin film transistor , amorphous solid , optoelectronics , active matrix , subthreshold slope , oled , subthreshold conduction , transistor , layer (electronics) , field effect transistor , electrical engineering , nanotechnology , chemistry , crystallography , engineering , voltage
Amorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active‐matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch‐stop layer (ESL) delivered excellent electrical performance with field‐ effect mobility of 21 cm 2 /V‐s, an on/off ratio of >10 8 , and subthreshold slope (SS) of 0.29V/dec. A full color 19‐inch AMOLED display has been developed using the amorphous IGZO TFT backplane.