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69.1: Photo‐Leakage Current in ZnO TFTs for Transparent Electronics
Author(s) -
Kamada Yudai,
Fujita Shizuo,
Hiramatsu Takahiro,
Matsuda Toshiyuki,
Furuta Mamoru,
Hirao Takashi
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499823
Subject(s) - materials science , optoelectronics , leakage (economics) , thin film transistor , electronics , current (fluid) , electrical engineering , nanotechnology , engineering , layer (electronics) , economics , macroeconomics
We investigate the generation mechanisms of photo‐leakage current in ZnO TFTs and propose the methods to reduce the undesirable photo‐leakage current in ZnO TFTs in the visible light. We successfully reduce the photo‐leakage current of the ZnO TFTs by using double gate structure.