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65.4: Active Matrix PHOLED Displays on Temporary Bonded Polyethylene Naphthalate Substrates with 180 °C a‐Si:H TFTs
Author(s) -
Loy Doug,
Lee Yong Kyun,
Bell Cynthia,
Richards Mark,
Bawolek Ed,
Ageno Scott,
Moyer Curt,
Marrs Michael,
Venugopal Sameer M.,
Kaminski Jann,
Colaneri Nick,
O'Rourke Shawn M.,
Silvernail Jeff,
Rajan Kamala,
Ma Ruiqing,
Hack Michael,
Brown Julie J.,
Forsythe Eric,
Morton David
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256966
Subject(s) - polyethylene naphthalate , thin film transistor , oled , materials science , amorphous solid , phosphorescence , saturation (graph theory) , layer (electronics) , phosphorescent organic light emitting diode , optoelectronics , active layer , polyethylene , nanotechnology , chemistry , optics , composite material , crystallography , fluorescence , physics , mathematics , combinatorics
A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded polyethylene naphthalate substrates is discussed and a 4.1‐inch QVGA active matrix (AM) phosphorescent OLED display is demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.773 cm 2 /V‐sec, layer to layer registration distortion less than 10ppm and low defectivity. The efficiency of the OLED display is 39 cd/A at 500 nits.