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9.3: Active‐Matrix Organic Light Emitting Diode Using Inverse Staggered Poly‐Si TFT with a Center‐Offset Gated Structure
Author(s) -
Kang Dong Han,
Oh Jae Hwan,
Park Mi Kyung,
Park Tae Jin,
Oh Beom Seok,
Kim Gyeong Heon,
Lee Eun Ho,
Hur Ji Ho,
Jang Jin,
Chang Young Jin,
Choi Jae Beom,
Kim Chi Woo
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256950
Subject(s) - thin film transistor , active matrix , oled , backplane , materials science , amoled , optoelectronics , offset (computer science) , diode , transistor , polycrystalline silicon , electrical engineering , computer science , nanotechnology , engineering , voltage , layer (electronics) , programming language
We have developed a low cost AM backplane using non‐laser polycrystalline silicon (poly‐Si) having inverse staggered TFT. The thin‐film transistors (TFTs) have a center‐offset gated structure to reduce the leakage current without scarifying the on‐currents. A center‐offset length of the TFTs has 3 μm for both switching and driving TFTs. Finally, we have made a 2.2 inch QQVGA (160 × 120) active‐matrix organic light emitting diode (AMOLED) display with conventional 2T 1C pixel circuits.