Premium
9.2: Line‐Scan Sequential Lateral Solidification Process for AMOLED Application
Author(s) -
Choi Jae Beom,
Park CheolHo,
Chung InDo,
Lee KwonHyung,
Min Hoon Kee,
Kim ChiWoo,
Kim Sang Soo
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256939
Subject(s) - amoled , materials science , thin film transistor , backplane , perpendicular , line (geometry) , optoelectronics , process (computing) , transistor , laser , optics , computer science , electrical engineering , composite material , computer hardware , voltage , geometry , engineering , active matrix , mathematics , physics , layer (electronics) , operating system
We have demonstrated that thin film transistor backplanes for AMOLED could be fabricated with line‐scan sequential lateral solidification (SLS) process. with 4 μm × 730 mm single laser beamlet, directional and two‐shot SLS processes were carried out to make polycrystalline Si films. The geometry for driving TFTs, which can provide sufficient uniformity of TFT performances, is that the source‐drain direction is perpendicular to the grain growth direction. 14″ WXGA (1366×RGB×768) AMOLEDsfor TV application were fabricated by utilizing different TFT geometry for driving TFTs and switching TFTs. The advantages of the line‐scan SLS system are (1) it can provide higher productivity than the conventional laser system and (2) large displays over 50″ can be manufactured without scan overlap area.