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56.4: Formation of Single‐Layer Al‐Alloy Interconnection for Source and Drain of a‐Si TFT Using One‐Wet‐One‐Dry Etching with Four‐Mask Process
Author(s) -
Goto Hiroshi,
Kawakami Nobuyuki,
Ochi Mototaka,
Morita Shinya,
Fukuma Shinya,
Nakai Junichi,
Kugimiya Toshihiro,
Yoneda Yoichiro,
Kusumoto Eisuke
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256926
Subject(s) - materials science , thin film transistor , etching (microfabrication) , layer (electronics) , interconnection , alloy , optoelectronics , transistor , dry etching , fabrication , silicon , amorphous solid , contact resistance , metallurgy , electrical engineering , composite material , computer science , chemistry , crystallography , engineering , medicine , computer network , alternative medicine , pathology , voltage
Single layer Al‐alloy interconnection for source and drain of amorphous Si (a‐Si) thin film transistor (TFT) is demonstrated by direct‐contact technology with no barrier metals at the interfaces with both ITO and a‐Si. Thermally stable contacts were formed on a‐Si with a buried nitridation layer while maintaining the contact resistivity as low as 0.1Ωcm 2 . Excessive interdiffusion between the Al‐alloy electrode and a‐Si that can degrade TFT characteristics was suppressed by the nitridation layer. The Al‐alloy direct contact technology, combined with one‐wet‐one‐dry etching with four‐mask process, drastically simplifies the the TFT fabrication process and contributes to cost reduction of a‐Si TFT LCD.