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51.1: Invited Paper : Flexible CMOS and Electrophoretic Displays
Author(s) -
Allee David R.,
Venugopal Sameer,
Krishna Roshith,
Kaftanoglu Korhan,
QuevedoLopez Manuel A.,
Gowrisanker Shrinivas,
AvendanoBolivar Adrianno E.,
Alshareef Husam N.,
Gnade Bruce
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256899
Subject(s) - nmos logic , cmos , pmos logic , thin film transistor , transistor , electrical engineering , materials science , power consumption , backplane , optoelectronics , power (physics) , electronic engineering , engineering , voltage , nanotechnology , physics , layer (electronics) , quantum mechanics
Flexible CMOS has been achieved by combining nMOS a‐Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a‐Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.