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49.3: Growth Mechanism and Inhibition Technologies of a Contamination on the Surface of Photomask for Longtime LCD‐TFT Lithography Process
Author(s) -
Yanagita Yoshinori,
Kaneko Yasushi,
Abe Yasuyuki,
Ogawa Hiroshi,
Takayama Shigeki,
Shinchi Hiroyuki,
Tsuchiya Masayoshi,
Murai Makoto
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256890
Subject(s) - photomask , contamination , lithography , materials science , liquid crystal display , thin film transistor , nanotechnology , optoelectronics , resist , ecology , layer (electronics) , biology
Progressive contamination on photomasks has become a serious concern as a source of defects in long‐term TFT‐LCD manufacturing. We determined the chemical structure and mechanism of formation of such contamination, devised an accelerated test to replicate it, and developed a means of inhibiting it.