49.3: Growth Mechanism and Inhibition Technologies of a Contamination on the Surface of Photomask for Longtime LCD‐TFT Lithography Process | Zendy

Yanagita Yoshinori | Zendy; Kaneko Yasushi | Zendy; Abe Yasuyuki | Zendy; Ogawa Hiroshi | Zendy; Takayama Shigeki | Zendy; Shinchi Hiroyuki | Zendy; Tsuchiya Masayoshi | Zendy; Murai Makoto | Zendy

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49.3: Growth Mechanism and Inhibition Technologies of a Contamination on the Surface of Photomask for Longtime LCD‐TFT Lithography Process

Author(s) -

Yanagita Yoshinori,

Kaneko Yasushi,

Abe Yasuyuki,

Ogawa Hiroshi,

Takayama Shigeki,

Shinchi Hiroyuki,

Tsuchiya Masayoshi,

Murai Makoto

Publication year - 2009

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3256890

Subject(s) - photomask , contamination , lithography , materials science , liquid crystal display , thin film transistor , nanotechnology , optoelectronics , resist , ecology , layer (electronics) , biology

Progressive contamination on photomasks has become a serious concern as a source of defects in long‐term TFT‐LCD manufacturing. We determined the chemical structure and mechanism of formation of such contamination, devised an accelerated test to replicate it, and developed a means of inhibiting it.

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