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42.4: Characterization of Electrochemically‐Active Defects in Si‐Film Laser‐Crystallized with Directional SLS by Measuring the Stress Release during Secco Etching
Author(s) -
Sasaki Nobuo,
Kitahara Kuninori,
Yamamoto Kenichi
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256860
Subject(s) - materials science , etching (microfabrication) , characterization (materials science) , laser , crystal (programming language) , composite material , stress (linguistics) , optoelectronics , crystallography , nanotechnology , optics , chemistry , layer (electronics) , computer science , linguistics , philosophy , physics , programming language
It has been verified that the crystal quality of directional SLS film achieves a position between those of ELC and CLC. The SLS film contains some electrochemically‐active in‐grain defects, which is hard to be passivated by hydrogen; this kind of defects are not observed in CLC nor ELC films.