42.4: Characterization of Electrochemically‐Active Defects in Si‐Film Laser‐Crystallized with Directional SLS by Measuring the Stress Release during Secco Etching | Zendy

Sasaki Nobuo | Zendy; Kitahara Kuninori | Zendy; Yamamoto Kenichi | Zendy

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42.4: Characterization of Electrochemically‐Active Defects in Si‐Film Laser‐Crystallized with Directional SLS by Measuring the Stress Release during Secco Etching

Author(s) -

Sasaki Nobuo,

Kitahara Kuninori,

Yamamoto Kenichi

Publication year - 2009

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3256860

Subject(s) - materials science , etching (microfabrication) , characterization (materials science) , laser , crystal (programming language) , composite material , stress (linguistics) , optoelectronics , crystallography , nanotechnology , optics , chemistry , layer (electronics) , computer science , linguistics , philosophy , physics , programming language

It has been verified that the crystal quality of directional SLS film achieves a position between those of ELC and CLC. The SLS film contains some electrochemically‐active in‐grain defects, which is hard to be passivated by hydrogen; this kind of defects are not observed in CLC nor ELC films.

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