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35.4: Stable and Efficient Organic Light Emitting Diodes Based on a Single Host of p ‐Doped and n ‐Doped Layers
Author(s) -
Ho MengHuan,
Hsieh MingTa,
Chen JennFang,
Lin KuanHeng,
Chen Chin H.
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256826
Subject(s) - ambipolar diffusion , oled , doping , materials science , diode , fabrication , optoelectronics , anthracene , caesium , photochemistry , electron , chemistry , inorganic chemistry , nanotechnology , layer (electronics) , physics , alternative medicine , quantum mechanics , medicine , pathology
A power‐efficient and stable organic light emitting diode with a simplified structure based on 2‐methyl‐9,10‐di(2‐naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO 3 ) into MADN and 15% cesium carbonate (Cs 2 CO 3 ) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p‐i‐n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p‐ and n‐doped carrier transport layers.