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35.3: High‐Performance Tandem White OLEDs Using a Li‐Free “P‐N” Connector
Author(s) -
Hatwar Tukaram K.,
Spindler Jeffrey P.,
Begley William J.,
Giesen David J.,
Kondakov Denis Y.,
Slyke Steven,
Murano Sven,
Kucur Erol,
He Gufeng,
BlochwitzNimoth Jan
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256825
Subject(s) - tandem , common emitter , materials science , oled , cable gland , optoelectronics , layer (electronics) , doping , fluorescence , nanotechnology , optics , computer science , composite material , telecommunications , physics
A nonmetallic connector has been developed for high‐efficiency tandem white architecture. Forming the “N” type layer using NDN‐26 doped into NET‐18 and inserting an organometallic thin layer between the “N” and “P” layers results in a high‐performance connector. An efficiency of 33 cd/A has been achieved at 6.7 V, 1000 cd/m 2 and 10000K color temperature in a fluorescent based tandem emitter. This >15% EQE device also demonstrates a half‐life of ∼80,000 h at 1000 cd/m 2 .