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35.1: Invited Paper : Electrical Doping for High Performance Organic Light Emitting Diodes
Author(s) -
Kim JangJoo,
Leem DongSeok,
Lee JaeHyun
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256823
Subject(s) - dopant , oled , materials science , doping , optoelectronics , diode , phosphorescence , work function , tandem , dopant activation , layer (electronics) , nanotechnology , optics , physics , composite material , fluorescence
Novel p‐dopants of ReO 3 and CuI, and an n‐dopant of Rb 2 CO 3 have been developed. Among many other p‐dopants, ReO 3 possesses superior characteristics of low temperature deposition, efficient charge generation and increasing the device lifetime. The absorption intensity of CT complexes and current‐voltage characteristics revealed that charge generation in p‐doped hole transporting layers is more effective when the work function of the dopant is larger. High performance OLEDs have been fabricated using the p‐ and n‐dopants, including the low driving voltage p‐i‐n phosphorescent OLEDs, high power efficiency of tandem OLEDs using ReO 3 doped NPB/ReO 3 (1 nm)/Rb 2 CO 3 doped Bphen as the interconnection unit, and top emission OLEDs using CuI doped NPB as the hole injection layer from Ag electrode.