Premium
33.3: A 14.1‐Inch WXGA+ LCD Panel Using Hybrid Silicon Thin Film Transistors
Author(s) -
Cho Sung Haeng,
Choi Yong Mo,
Jeong Yu Gwang,
Kim Hyungjun,
Song Jun Ho,
Jeong ChangOh,
Kim Shi Yul,
Kim Sang Soo
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256816
Subject(s) - thin film transistor , materials science , optoelectronics , polycrystalline silicon , transistor , diode , fabrication , flat panel display , silicon , liquid crystal display , electrical engineering , nanotechnology , voltage , engineering , medicine , alternative medicine , layer (electronics) , pathology
A hybrid silicon technology (HyST) thin film transistor (TFT) process using a diode‐pumped solid state (DPSS) laser has been developed by implementing low‐temperature poly‐Si (LTPS) TFTs with a‐Si:H TFTs on the same substrate. HyST TFTs are deployed on the peripheral area of a panel for integrated gate driver circuits and a‐Si:H TFTs are used as switching devices for pixels in the active display area. This technology is based on the current a‐Si:H TFT fabrication processes without additional ion‐doping and activation processes. Field effect mobilities of 4 ∼ 5 cm 2 /V⋅s and 0.5 cm 2 /V⋅s for HyST and a‐Si:H TFTs, respectively, are obtained. Low power consumption, high speed, small integration area, high reliability, and low photosensitivity are achieved by means of HyST TFTs, compared to gate driving circuits integrated with a‐Si:H TFTs. A 14.1‐inch WXGA+ (1440×900) LCD panel has been demonstrated using the new HyST TFT process.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom