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33.3: A 14.1‐Inch WXGA+ LCD Panel Using Hybrid Silicon Thin Film Transistors
Author(s) -
Cho Sung Haeng,
Choi Yong Mo,
Jeong Yu Gwang,
Kim Hyungjun,
Song Jun Ho,
Jeong ChangOh,
Kim Shi Yul,
Kim Sang Soo
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256816
Subject(s) - thin film transistor , materials science , optoelectronics , polycrystalline silicon , transistor , diode , fabrication , flat panel display , silicon , liquid crystal display , electrical engineering , nanotechnology , voltage , engineering , medicine , alternative medicine , layer (electronics) , pathology
A hybrid silicon technology (HyST) thin film transistor (TFT) process using a diode‐pumped solid state (DPSS) laser has been developed by implementing low‐temperature poly‐Si (LTPS) TFTs with a‐Si:H TFTs on the same substrate. HyST TFTs are deployed on the peripheral area of a panel for integrated gate driver circuits and a‐Si:H TFTs are used as switching devices for pixels in the active display area. This technology is based on the current a‐Si:H TFT fabrication processes without additional ion‐doping and activation processes. Field effect mobilities of 4 ∼ 5 cm 2 /V⋅s and 0.5 cm 2 /V⋅s for HyST and a‐Si:H TFTs, respectively, are obtained. Low power consumption, high speed, small integration area, high reliability, and low photosensitivity are achieved by means of HyST TFTs, compared to gate driving circuits integrated with a‐Si:H TFTs. A 14.1‐inch WXGA+ (1440×900) LCD panel has been demonstrated using the new HyST TFT process.