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26.2: Preferred Orientation Formation of MgO Layer during Ion Beam Assisted Deposition Process
Author(s) -
Yu Hak Ki,
Kim WoongKwon,
Lee JongLam,
Park Eung Chul,
Kim Jae Sung,
Ryu Jae Hwa
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256785
Subject(s) - materials science , substrate (aquarium) , deposition (geology) , layer (electronics) , ion beam , diffraction , ion , ion beam assisted deposition , orientation (vector space) , crystallography , beam (structure) , nanotechnology , chemistry , optics , geometry , paleontology , oceanography , physics , organic chemistry , mathematics , sediment , biology , geology
Abstract MgO films deposited on Si (111) and Al 2 O 3 (0006) substrate have only (111) diffraction independent of film thickness while those on Si (100) substrate have preferred orientation change from (200) to (111) as film thickened due to the highest adatom mobility of (200) plane. By using ion beam assisted deposition, the crystal structure of MgO could be controlled via adjusting adatom mobility.