Premium
21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer
Author(s) -
Ohara Hiroki,
Sasaki Toshinari,
Noda Kousei,
Ito Shunichi,
Sasaki Miyuki,
Toyosumi Yayoi,
Endo Yuta,
Yoshitomi Shuhei,
Sakata Junichiro,
Serikawa Tadashi,
Yamazaki Shunpei
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256764
Subject(s) - passivation , amoled , materials science , optoelectronics , thin film transistor , oxide thin film transistor , layer (electronics) , threshold voltage , amorphous solid , oxide , voltage , electrical engineering , nanotechnology , transistor , chemistry , metallurgy , crystallography , engineering , active matrix
We have developed a 4.0 inch QVGA AMOLED display using amorphous In‐Ga‐Zn‐Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiO x with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.