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21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane
Author(s) -
Cho DooHee,
Yang Shinhyuk,
Park SangHee Ko,
Byun Chunwon,
Yoon SungMin,
Lee JeongIk,
Hwang ChiSun,
Chu Hye Yong,
Cho Kyoung Ik
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256763
Subject(s) - thin film transistor , materials science , annealing (glass) , passivation , optoelectronics , doping , indium , zinc , active layer , sputter deposition , sputtering , transistor , layer (electronics) , thin film , metallurgy , composite material , nanotechnology , electrical engineering , engineering , voltage
Abstract We have fabricated the transparent bottom gate TFTs using Al and Sn‐doped zinc indium oxide (AT‐ZIO) as an active layer. The AT‐ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT‐ZIO TFT showed a field effect mobility of 15.6 cm 2 /Vs even before annealing. The mobility increased with increasing In 2 O 3 content and post‐annealing temperature. The AT‐ZIO TFT exhibited afield effect mobility of 33 cm 2 /Vs, a sub‐threshold swing of 0.08 V/dec, and an on/off current ratio of more than 10 9 after Al 2 O 3 passivation and post‐annealing. We have fabricated AMOLED panels with the bottom gate AT‐ZIO TFT back‐plane successfully.