Premium
15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering
Author(s) -
Lee MingHsien,
Shih ChingChieh,
Chen JimShone,
Huang WeiMing,
Gan FengYuan,
Shih YiChi,
Qiu Cindy X.,
Shih IShiang
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256729
Subject(s) - thin film transistor , materials science , sputtering , optoelectronics , oxide , active layer , layer (electronics) , indium , transistor , oxide thin film transistor , thin film , nanotechnology , electrical engineering , metallurgy , voltage , engineering
Results on indium‐oxide‐based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm 2 /V‐s), high ON/OFF current ratio and large on‐state current. Fabricating oxide TFTs on temperature‐sensitive substrates is also attainable owing to the low temperature process of the active layer preparation.