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P‐89: Low Temperature Furnace Method to Deposit Transparent Indium Oxide Film on Gallium Nitride‐Based LED
Author(s) -
Lian JanTian,
Liou JianYe,
Tsou ChienLung,
Lu FuChie,
Lin TaiYuan,
Mo ChiNeng
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256581
Subject(s) - indium , light emitting diode , materials science , optoelectronics , oxide , electroluminescence , indium nitride , gallium nitride , crystallite , nitride , gallium , layer (electronics) , wide bandgap semiconductor , indium tin oxide , metallurgy , composite material
Increasing the light extraction and the current spreading area of GaN LEDs is helpful for enhancing the efficiency of the light emission. We have developed a simple deposited method of Indium oxide (In x O y ) on the top layer of GaN LEDs by using furnaces at the low temperature (550°C). The deposited Film of Indium oxide on GaN LEDs is crystallites. The electroluminescent intensity of GaN LEDs with Indium oxide is higher than GaN LEDs without Indium oxide about six times.