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P‐59: Lower Resistivity Wiring Process for TFT Source/Drain Electrodes by Oxygen‐Mixture Sputtering of Cu‐Ca Alloy
Author(s) -
Takasawa Satoru,
Ishibashi Satoru,
Masuda Tadashi
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256539
Subject(s) - sputtering , alloy , thin film transistor , electrical resistivity and conductivity , layer (electronics) , materials science , substrate (aquarium) , electrode , oxide , optoelectronics , metallurgy , composite material , electrical engineering , thin film , chemistry , nanotechnology , geology , engineering , oceanography
The low resistivity Cu wiring process using under oxide layer of Cu or Cu alloy has good adhesion to the glass substrate and Si under‐layer, and high barrier performance of prevention between Cu and Si interdiffusion. This Process is effective to enlarging TFT‐LCD panel for high‐definition TV.