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P‐182L: Late‐News Poster : Improvements in the Device Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by XeCl Excimer Laser Irradiation
Author(s) -
Ahn Byung,
Shin Hyun Soo,
Jeong Woong Hee,
Kim Gun Hee,
Kim Hyun Jae,
Choi SungHwan,
Han MinKoo
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256496
Subject(s) - materials science , thin film transistor , amorphous solid , optoelectronics , excimer laser , indium , irradiation , gallium , thin film , threshold voltage , zinc , excimer , laser , transistor , layer (electronics) , nanotechnology , optics , chemistry , voltage , electrical engineering , metallurgy , physics , organic chemistry , engineering , nuclear physics
The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a‐IGZO) thin films was investigated. The resistivity of the a‐IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as‐deposited thin film from 10 4 to 10 −3 Ωcm. The source/drain regions were selectively laser irradiated in the a‐IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field‐effect mobility of 21.79 cm 2 /Vs, an on/off ratio of 6.0 × 10 7 , a threshold voltage of −0.15 V, and a subthreshold swing of 0.26 V/decade.