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P‐180L: Late‐News Poster : TFT Characteristics of LTPS Backplane for Large Scale AMOLED Device Fabricated Using Special JIC Method
Author(s) -
II Ji Su Ahn,
Lee Jeong,
Yu Cheol Ho,
Min Hoon Kee,
Kim Sung Chul,
Kim Sang Soo,
Hong Won Eui,
Ro Jae Sang
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256495
Subject(s) - backplane , amoled , materials science , thin film transistor , optoelectronics , layer (electronics) , electrical engineering , nanotechnology , engineering , active matrix
LTPS TFT backplane for Large Scale AMOLED Device was fabricated using a new special Joule‐Heating Induced Crystallizing (JIC) method. A mass production compatible process for large scale AMOLED Product was newly developed using JIC method. By adopting the new process architecture, additional conducting layer was removed and additional processes were dramatically reduced for mass production. In addition, laser tool or long‐time furnace annealing process was removed in LTPS process. Poly‐Si showed a wide range of crystallinity by changing processing parameters and the p channel TFTs of this work exhibited a mobility of up to 25.4 cm2/V⋅sec, threshold voltage of −1.5V, sub‐threshold slope of 0.67 V/dec, and on/off ratio of 4 × 104. We believe that this technology can be successfully applied to the mass production of large scale AMOLED TV.