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P‐21: High Stability and Device Design for Self‐Heating Reduction of a‐Si:H TFT
Author(s) -
Wei ChuanSheng,
Chiu ChaoChien,
Shen GuangRen,
Chiou ShiaoHao,
Chen Pei Ming,
Shih ChingChieh,
Liu Sheng Chao,
Lee YeongShyang,
Chen JimShone,
Huang WeiMing
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256491
Subject(s) - reliability (semiconductor) , thin film transistor , materials science , joule heating , degradation (telecommunications) , optoelectronics , deposition (geology) , reduction (mathematics) , stability (learning theory) , layer (electronics) , electronic engineering , nanotechnology , computer science , composite material , engineering , power (physics) , physics , paleontology , geometry , mathematics , quantum mechanics , sediment , biology , machine learning
High performance a‐Si:H TFT with properly SiNx deposition and low deposition rate of a‐Si:H for high stability has been improved. Otherwise, large device dimension accompany milliamperes current caused joule heating degradation device reliability. Fine design for promoting reliability for self‐heating reduction was also investigated. Square‐like a‐Si:H active layer induces higher turn‐on current than rectangular‐like one degraded the device reliability. Applied the good performance TFTs to driver application is good enough for high temperature of 85 °Coperation.