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P‐20: Light Induced Instability of Nanocrystalline Silicon Thin Film Transistor
Author(s) -
Kim SunJae,
Ha TaeJun,
Park HyunSang,
Kuk SeungHee,
Kim YongJin,
Han MinKoo
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256490
Subject(s) - thin film transistor , materials science , amorphous silicon , transistor , optoelectronics , oxide thin film transistor , silicon , nanocrystalline silicon , instability , nanocrystalline material , amorphous solid , stress (linguistics) , electrical engineering , nanotechnology , crystalline silicon , crystallography , chemistry , physics , linguistics , philosophy , engineering , layer (electronics) , voltage , mechanics
We fabricated bottom gate nanocrystalline silicon (nc‐Si) thin film transistor (TFT). We report the instability phenomena of the nc‐Si TFT under light illumination under gate bias stress for the first time. The comparison with hydrogenated amorphous silicon (a‐Si:H) TFT was carried out. Under only light illumination was induced, the transfer characteristic of nc‐Si TFT was almost unchanged. Also, positive gate bias stress hardly changed the V TH of nc‐Si TFT, while that of a‐Si:H TFT was shifted considerably. However, under negative bias stress, a‐Si:H TFT showed rather high stability. Instability mechanism under light illumination under gate bias stress was different in nc‐Si TFT and a‐Si:H TFT. The V TH shift of both TFT was opposite direction.