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P‐11: DC/AC Electrical Instability of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs
Author(s) -
Fung TzeChing,
Abe Katsumi,
Kumomi Hideya,
Kanicki Jerzy
Publication year - 2009
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3256481
Subject(s) - thin film transistor , amorphous solid , materials science , sputtering , stress (linguistics) , instability , pulse (music) , electron , optoelectronics , analytical chemistry (journal) , condensed matter physics , voltage , atomic physics , electrical engineering , chemistry , thin film , physics , composite material , crystallography , layer (electronics) , nanotechnology , linguistics , philosophy , engineering , quantum mechanics , chromatography , mechanics
Abstract The paper presents the study of electrical instability of RF sputter amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistor (TFT) induced by negative steady‐state (or D.C.) bias‐temperature‐stress (BTS). Similarly to positive BTS results [8], the stress time evolution of the threshold voltage shift (Δ V th ) induced by negative BTS under different stress voltages and temperatures can all be described by the stretched‐exponential model. for the first time, we also present the results for Δ V th under pulse (or A.C.) BTS. The Δ V th for positive A.C. BTS is found to have a pulse‐period dependence while a huge reduction of Δ V th is found for all negative A. C. BTS results. This might suggest the time for holes to accumulate near the a‐IGZO/ SiO 2 interface is much longer than the time for electrons. The effect of bi‐polar stressing is also discussed.