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63.4: Invited Paper : Development and Application Prospects of InGaN‐based Optoelectronic Devices Prepared in Nonpolar Orientations
Author(s) -
Masui Hisashi,
Nakamura Shuji
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069841
Subject(s) - light emitting diode , optoelectronics , materials science , diode , laser , optics , physics
High‐power light‐emitting diodes (LEDs) and laser diodes have been realized on nonpolar planes of bulk‐GaN substrates. Spontaneously polarized light emission is obtained from nonpolar LEDs, which is believed to improve the system energy efficiency when nonpolar LEDs are combined with liquid‐crystal displays. Preliminary experimental results are reported.