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55.4: Design of Integrated a‐Si Gate Driver Circuits for Low Power Consumption
Author(s) -
Hwang Injae,
Moh Sangmoon,
Lee MinCheol,
Lee EungSang
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069802
Subject(s) - gate driver , power consumption , electronic circuit , thin film transistor , power (physics) , electrical engineering , integrated circuit , computer science , electronic engineering , engineering , materials science , nanotechnology , voltage , physics , layer (electronics) , quantum mechanics
We have developed integrated a‐Si:H TFT gate driver circuits on large area TFT‐LCD for low power solution. The proposed driving scheme achieves 40% lower power consumption than that of a conventional a‐Si:H TFT gate drivers by means of double 2‐phase clock system. We have redesigned a‐Si:H gate driver circuit and made the proto type 13.3″WXGA panel.
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