Premium
42.4L: Late‐News Paper : 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga 2 O 3 ‐In 2 O 3 ‐ZnO) TFT
Author(s) -
Son KyoungSeok,
Kim TaeSang,
Jung JiSim,
Ryu MyungKwan,
Park KyungBae,
Yoo ByungWook,
Kim JungWoo,
Lee YoungGu,
Kwon JangYeon,
Lee SangYoon,
Kim JongMin
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069743
Subject(s) - amoled , threshold voltage , materials science , thin film transistor , amorphous solid , optoelectronics , voltage , overdrive voltage , oled , transistor , electrical engineering , nanotechnology , crystallography , chemistry , active matrix , layer (electronics) , engineering
We successfully fabricated GIZO (Ga 2 O 3 ‐In 2 O 3 ‐ZnO) TFTs with high mobility of 2.6 cm 2 /Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a‐Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μm is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.