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42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT
Author(s) -
Lee Jehun,
Kim Dohyun,
Yang Dongju,
Hong Sunyoung,
Yoon Kapsoo,
Hong Pilsoon,
Jeong Changoh,
Park HongSik,
Kim Shi Yul,
Lim Soon Kwon,
Kim Sang Soo,
Son Kyoungseok,
Kim Taesang,
Kwon Jangyeon,
Lee Sangyoon
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069740
Subject(s) - thin film transistor , materials science , threshold voltage , passivation , optoelectronics , etching (microfabrication) , annealing (glass) , transistor , active matrix , field effect , voltage , electrical engineering , nanotechnology , composite material , layer (electronics) , engineering
The world's largest (15‐inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4 μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm 2 /V‐s, V th of −1.3±1.4V and sub‐threshold swing (SS) of 0.96±0.10 V/dec. for a manufacturing‐oriented process, the main factors affecting threshold voltage (V th ) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce V th variation.