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42.1: Invited Paper : Improved Amorphous In‐Ga‐Zn‐O TFTs
Author(s) -
Hayashi Ryo,
Sato Ayumu,
Ofuji Masato,
Abe Katsumi,
Yabuta Hisato,
Sano Masafumi,
Kumomi Hideya,
Nomura Kenji,
Kamiya Toshio,
Hirano Masahiro,
Hosono Hideo
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069739
Subject(s) - thin film transistor , amorphous solid , materials science , optoelectronics , transistor , plasma enhanced chemical vapor deposition , oxide thin film transistor , layer (electronics) , nanotechnology , engineering physics , electrical engineering , crystallography , engineering , chemical vapor deposition , chemistry , voltage
Abstract We review the features of amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a‐IGZO properties, where a conventional PECVD a‐SiN X :H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.