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30.2: Active Matrix Electrophoretic Displays on Temporary Bonded Stainless Steel Substrates with 180 °C a‐Si:H TFTs
Author(s) -
O'Rourke Shawn M.,
Venugopal Sameer M.,
Raupp Gregory B.,
Allee David R.,
Ageno Scott,
Bawolek Edward J.,
Loy Douglas E.,
Kaminski Jann P.,
Moyer Curt,
O'Brien Barry,
Long Ke,
Marrs Michael,
Bottesch Dirk,
Dailey Jeff,
Trujillo Jovan,
Cordova Rita,
Richards Mark,
Toy Daniel,
Colaneri Nicholas
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069688
Subject(s) - thin film transistor , materials science , electrophoresis , active matrix , saturation (graph theory) , amorphous solid , flexible display , matrix (chemical analysis) , electrophoretic deposition , transistor , optoelectronics , composite material , crystallography , electrical engineering , chemistry , layer (electronics) , voltage , chromatography , engineering , coating , mathematics , combinatorics
A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded stainless steel substrates is discussed and a 3.8‐inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.7 cm 2 /V‐sec, median drive currents of 26.2 μA and low defectivity.