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30.1: Flexible Image Sensor Made of a‐Si:H TFTs on Metal Foil
Author(s) -
Hur Ji Ho,
Kim Hyo Jun,
Lee Eun Ho,
Lee Jung Woo,
Hong Soonwon,
Lee Donghoon,
Kim Se Hwan,
Oh Dong Hae,
Jeong Jun Young,
Cheon Jun Hyuk,
Jang Jin
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069687
Subject(s) - thin film transistor , foil method , materials science , polishing , pixel , optoelectronics , amorphous silicon , surface roughness , transistor , surface finish , silicon , capacitor , electrical engineering , optics , metallurgy , voltage , nanotechnology , composite material , crystalline silicon , engineering , physics , layer (electronics)
We have developed a flexible image sensor using hydrogenated amorphous silicon thin film transistor (a‐Si:H TFT) on metal foil. The metal foil was treated by electrolytic polishing and thus its RMS surface roughness was reduced from 1205 to 71.6 Å. The sensor has 160 × 128 pixels, where a pixel has one switching TFT, one sensor TFT and a storage capacitor. A clear image was demonstrated on the metal foil using conventional pixel having two transistors and one cap.