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24.2: Single Layer Al‐Ni‐La‐Si Interconnections for Source and Drain of LTPS‐TFT LCDs Using Direct Contacts with both ITO and poly‐Si
Author(s) -
Kugimiya Toshihiro,
Yoneda Yoichiro,
Kusumoto Eisuke,
Gotoh Hiroshi,
Ochi Mototaka,
Kawakami Nobuyuki
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069660
Subject(s) - materials science , alloy , etching (microfabrication) , layer (electronics) , thin film transistor , optoelectronics , interconnection , electrical resistivity and conductivity , resist , metallurgy , composite material , electrical engineering , computer network , computer science , engineering
It was demonstrated for the first time that the use of Al‐Ni‐La‐Si alloy films for the direct contacts of interconnection lines with both ITO and poly‐Si was feasible for the LTPS‐TFTs. Measured contact resistivity was in the order of 10 −4 Ω.cm 2 for ITO and Al‐0.6 at.% Ni‐0.1 at.% La‐0.5 at.% Si. The Al alloy films patterned on poly‐Si were found to be stable below 350 °C. It was also found that Al alloy has good dry etching characteristics such as a high etching rate and good selectivity to photo‐resist, suitable for high‐resolution LTPS‐TFT LCDs.