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24.1: 3‐Masks TFT Process by Using ITO Lift‐Off Technique
Author(s) -
Fang KuoLung,
Yang ChihChun,
Liao ChinYueh,
Wu HuangChun,
Lin HanTu,
Chen ChienHung
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069659
Subject(s) - lift (data mining) , thin film transistor , photolithography , passivation , materials science , fabrication , optoelectronics , process (computing) , computer science , electronic engineering , electrical engineering , nanotechnology , engineering , layer (electronics) , medicine , alternative medicine , pathology , data mining , operating system
Reducing TFT manufacturing steps in recent years has become an unavoidable technology trend for many TFT‐ LCD makers in order of cost reduction purpose. Here, we proposed a new mask reduction process (3‐masks TFT) by chemical lift‐off which based on conventional 4‐masks TFT fabrication process. The major spirit of 3‐masks technique combines passivation layer and pixel electrode formed in one photolithography process with HTM (Half tone mask). with this new HTM design, a small SiNx island cross TFT source contact edge border could be created to provide a pixel electrode conducting path away from electrical signal opening. In order to enhance to lift‐off ability, new optional extra lift‐off enhancement designs could be adopted to improve chemical lift‐off efficiency. Through the development of process and design of TFTs using 3‐masks HTM lift‐off scheme, one first 1.8″ HTM lift‐off panel was demonstrated which exhibits same performance of conventional fabricated one.