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21.4: Discharge Characteristics of AC‐PDP having Doped MgO Protective Layer in a Variation of Temperature
Author(s) -
Cho SungYong,
Lee DonKyu,
Ok JungWoo,
Park ChungHoo,
Lee Hea June,
Lee HoJun
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069646
Subject(s) - plasma display , doping , materials science , layer (electronics) , alternating current , luminance , luminous efficacy , voltage , analytical chemistry (journal) , optoelectronics , composite material , electrode , electrical engineering , chemistry , optics , physics , chromatography , engineering
In order to improve the discharge characteristics such as discharge voltage, luminance, luminous efficacy, temperature dependence of misfiring, a small amount of Si was added to the MgO protective layer of an alternating current plasma display panel (AC‐PDP). The effect of Si‐doping on a MgO protective layer was reported that it reduces the firing voltage and improved electro‐optical characteristics of AC‐PDP due to the increase of the secondary electron emission with Si concentration. In this study, it was observed that Si‐doping on MgO protective layer reduces the temperature dependence of misfiring compared with a pure MgO film. The effects of Si concentration are reported on the surface‐discharge characteristics of an AC‐PDP.