Premium
21.3: Reconstruction Characteristics of MgO (111) Textured Protective Layer by Over‐Frequency Accelerated Discharge in ACPDPs
Author(s) -
Kwon SangKoo,
Kim JeongHo,
Moon SeungKyu,
Park KyuHo,
Han SungSu,
Choi JongKwon,
Kim HyunHa,
Kim SungTae
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069645
Subject(s) - nucleation , materials science , layer (electronics) , electric field , partial discharge , plasma , silicon , polycrystalline silicon , composite material , analytical chemistry (journal) , optoelectronics , chemistry , electrical engineering , voltage , chromatography , physics , organic chemistry , quantum mechanics , engineering , thin film transistor
The reconstruction characteristics of MgO (111) textured protective layer and the influences of silicon and MgO seed particle in AC‐PDP were investigated by over‐frequency accelerated discharge and these were correlated to the variations of electronic structures. The reconstruction and exaggerated grain growth (EGG) were closely correlated with the partial pressure of evaporated MgO in plasma space and explained by defect‐assisted 2‐D and/or 3‐D nucleation and growth of charged clusters during discharge under electric field in AC‐PDP.